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| (R) BZW04-5V8/376 BZW04-5V8B/376B TRANSILTM FEATURES PEAK PULSE POWER : 400 W (10/1000s) STAND-OFF VOLTAGERANGE : From 5.8V to 376 V UNI AND BIDIRECTIONAL TYPES LOW CLAMPING FACTOR FAST RESPONSE TIME UL RECOGNIZED DESCRIPTION Transil diodes provide high overvoltage protection by clamping action. Their instantaneous response to transient overvoltages makes them particularly suited to protect voltage sensitive devices such as MOS Technology and low voltage supplied IC's. ABSOLUTE MAXIMUM RATINGS (Tamb = 25C) Symbol PPP P IFSM Parameter Peak pulse power dissipation (see note 1) Power dissipation on infinite heatsink Non repetitive surge peak forward current for unidirectional types Storage temperature range Maximum junction temperature Maximum lead temperature for soldering during 10s a 5mm from case. Tj initial = Tamb Tamb = 75C tp = 10ms Tj initial = Tamb Value 400 1.7 30 Unit W W A C C C F126 Tstg Tj TL - 65 to + 175 175 230 Note 1 : For a surge greater than the maximum values, the diode will fail in short-circuit. THERMAL RESISTANCES Symbol Rth (j-l) Rth (j-a) Junction to leads Junction to ambient on printed circuit. Llead = 10 mm Parameter Value 60 100 Unit C/W C/W January 1998 Ed : 2 1/6 BZW04-xx ELECTRICAL CHARACTERISTICS (Tamb = 25C) Symbol VRM VBR VCL IRM IPP Parameter Stand-off voltage Breakdown voltage Clamping voltage Leakage current @ VRM Peak pulse current Voltage temperature coefficient Forward voltage drop I PP VCL VBR V RM VF I RM V IF I T VF Types IRM @ VRM max A 1000 500 10 5 5 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 VBR min @ IR VCL @ IPP max 10/1000s V 10.5 11.3 14.5 16.7 21.2 25.2 30.6 33.2 37.5 41.5 45.7 49.9 53.9 64.8 77.0 92.0 113 137 165 207 246 274 328 344 414 A 38.0 35.4 27.6 24.0 19.0 16.0 13.0 12.0 10.7 9.6 8.8 8.0 7.4 6.2 5.2 4.3 3.5 2.9 2.4 2.0 1.6 1.5 1.4 1.5 1.2 VCL @ IPP max 8/20s V 13.4 14.5 18.6 21.7 27.2 32.5 39.3 42.8 48.3 53.5 59.0 64.3 69.7 84 100 121 146 178 212 265 317 353 388 442 529 A 174 160 124 106 85 71 59 54 48 43 39 36 33 27 23 19 16.0 13.0 11.0 9.0 7.0 6.5 6.0 5.2 4.3 T max note3 10 /C 5.7 6.1 7.3 7.8 8.4 8.8 9.2 9.4 9.6 9.7 9.8 9.6 10.0 10.1 10.3 10.4 10.5 10.6 10.7 10.8 10.8 10.8 10.8 11.0 11.0 -4 C typ note4 pF 3500 3100 2000 1550 1200 975 800 725 625 575 510 480 450 370 320 270 230 200 170 145 125 120 110 100 90 note2 Unidirectional BZW04-5V8 BZW04-6V4 BZW04-8V5 BZW04-10 BZW04-13 BZW04-15 BZW04-19 BZW04-20 BZW04-23 BZW04-26 BZW04-28 BZW04-31 BZW04-33 BZW04-40 BZW04-48 BZW04-58 BZW04-70 BZW04-85 BZW04-102 BZW04-128 BZW04-154 BZW04-171 BZW04-188 BZW04-213 BZW04-256 Bidirectional BZW04-5V8B BZW04-6V4B BZW04-8V5B BZW04-10B BZW04-13B BZW04-15B BZW04-19B BZW04-20B BZW04-23B BZW04-26B BZW04-28B BZW04-31B BZW04-33B BZW04-40B BZW04-48B BZW04-58B BZW04-70B BZW04-85B BZW04-102B BZW04-128B BZW04-154B BZW04-171B BZW04-188B BZW04-213B BZW04-256B V 5.8 6.4 8.5 10.2 12.8 15.3 18.8 20.5 23.1 25.6 28.2 30.8 33.3 40.2 47.8 58.1 70.1 85.5 102 128 154 171 188 231 256 V 6.45 7.13 9.5 11.4 14.3 17.1 20.9 22.8 25.7 28.5 31.4 34.2 37.1 44.7 53.2 64.6 77.9 95.0 114 143 171 190 209 237 285 mA 10 10 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 2/6 (R) BZW04-xx Types IRM @ VRM VBR @ min note2 Unidirectional BZW04-273 BZW04-299 BZW04-342 BZW04-376 Bidirectional BZW04-273B BZW04-299B BZW04-342B BZW04-376B A 1 1 1 1 V 273 299 342 376 V 304 332 380 418 mA 1 1 1 1 IR VCL @ IPP max 10/1000s V 438 482 548 603 A 1.2 0.9 0.9 0.8 V 564 618 706 776 VCL @ IPP max 8/20s A 4.0 3.7 3.2 3.0 T max note3 10 /C 11.0 11.0 11.0 11.0 -4 C typ note4 pF 85 80 75 70 Fig. 1: Peak pulse power dissipation versus initial junction temperature (printed circuit board). % I PP 100 10 s PULSE WAVEFORM 10/1000 s 50 0 1000 s t Note 2 : Note 3 : Note 4 : Pulse test: tp < 50 ms. VBR = T * (Tamb - 25) * VBR(25C) VR = 0 V, F = 1 MHz. For bidirectional types, capacitance value is divided by 2 3/6 (R) BZW04-xx Fig. 2 : Peak pulse power versus exponential pulse duration. PPP (W) 1E5 Tj initial = 25C 1E4 1E3 1E2 1E1 0.001 0.01 0.1 1 tp (ms ) EXPO. 10 100 Fig. 3 : Clamping voltage versus peak pulse current. Exponentialwaveform tp = 20 s________ tp = 1 ms------------tp = 10 ms............... VCL (V) 1000 BWZ04 - 376 BWZ04 - 213 % Ipp 100 50 0 tr t t r < 10 s t Tj initial = 25C 100 BWZ04 - 33 10 BWZ04 - 8V5 BWZ04 - 5V8 Ipp (A) 1 0.1 1 10 100 1000 Note : The curves of the figure 3 are specified for a junction temperature of 25 C before surge. The given results may be extrapolated for other junction temperatures by using the following formula : VBR = T * (Tamb -25) * VBR (25C). For intermediate voltages, extrapolate the given results. 4/6 (R) BZW04-xx Fig. 4a : Capacitance versus reverse applied voltage for unidirectional types (typical values). C (pF) 10000 B ZW04 - 5 V8 Fig. 4b : Capacitance versus reverse applied voltage for bidirectional types (typical values). C (pF) 10000 Tj = 25o C f = 1 MHz Tj = 25o C f = 1 MHz 1000 B ZW0 4 - 1 3 B ZW04 - 2 6 B ZW04 58 100 B ZW04 - 1 71 B ZW04 342 BZW04 - 5 V8 B 1000 BZW04 - 13B BZW04 - 2 6B BZW04 - 58B BZW04 - 171B BZW04 - 342B 100 10 V R (V) 1 1 10 100 10 1 V R (V) 10 100 Fig.5 : Peakforward voltagedrop versuspeakforward current (typical values for unidirectional types). Note : Multiply by 2 for units with V BR > 220V. Fig. 6 : Transientthermalimpedance junctionambientversus pulse duration (For FR4 PC Board with L lead = 10mm). Zth (j-a) (C/W) 100 10 tp(s) 1 0.01 0.1 1 10 100 1000 Fig. 7 : Relative variation of leakage current versus junction temperature. 5/6 (R) BZW04-xx ORDER CODE BZW 04 - 10 B RL 400 W PACKAGING : ' ' = Ammopack tape 'RL' = Tape and reel BIDIRECTIONAL No suffix : Unidirectional STAND-OFF VOLTAGE MARKING : Logo, Date Code, Type Code, Cathode Band (for unidirectional types only). PACKAGE MECHANICAL DATA F126 (Plastic) DIMENSIONS REF. Millimeters Min. A B C D L1 6.05 26 2.95 0.76 3.00 0.81 Typ. Max. Min. 6.20 Inches Typ. Max. 6.35 0.238 0.244 0.250 31 1.024 1.220 3.05 0.116 0.118 0.120 0.86 0.030 0.032 0.034 1.27 0.050 Note 1 : The lead is not controlled within zone L1 Packaging: standardpackaging is in tape and reel. Weight = 0.40 g. Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics. (c) 1998 SGS-THOMSON Microelectronics - Printed in Italy - All rights reserved. SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Morocco The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. 6/6 (R) |
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